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NTE5519 Dataheets PDF



Part Number NTE5519
Manufacturers NTE
Logo NTE
Description Silicon Controlled Rectifier
Datasheet NTE5519 DatasheetNTE5519 Datasheet (PDF)

NTE5517 thru NTE5519 Silicon Controlled Rectifier (SCR) Absolute Maximum Ratings: Repetitive Peak Off–State Voltage (TJ = +100°C), VDRM NTE5517 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5518 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5519 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

  NTE5519   NTE5519


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NTE5517 thru NTE5519 Silicon Controlled Rectifier (SCR) Absolute Maximum Ratings: Repetitive Peak Off–State Voltage (TJ = +100°C), VDRM NTE5517 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5518 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5519 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Repetitive Peak Reverse Voltage (TJ = +100°C), VRRM NTE5517 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE5518 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V NTE5519 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On–State Current (TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), ITSM . . . . . . . . . 350A Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak Gate–Power Dissipation (IGT ≤ IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W Operating Temperatue Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9°C/W Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures) Parameter Peak Off–State Current Maximum On–State Voltage (Peak) Peak On–State Current DC Holding Current DC Gate–Trigger Current DC Gate–Trigger Voltage Gate Controlled Turn–On Time Critical Rate–of–Rise of Off–State Voltage Symbol IDRM, IRRM VTM ITM IH IGT VGT tgt Critical dv/dt TC = +25°C, Gate Open Anode Voltage = 12V, RL = 30Ω, TC = +25°C Anode Voltage = 12V, RL = 30Ω, TC = +25°C td + tr, IGT = 150mA TC = +100°C, Gate Open Test Conditions TJ = +100°C, Gate Open, VDRM and VRRM = Max. Rating TC = +25°C Min – – – – – – – – Typ – – – – – – 2.5 100 Max Unit 2.0 1.6 70 50 25 2.0 – – mA V A mA mA V µs V/µs .155 (3.93) Max Gate Cathode .063 (1.6) .085 (2.15) .767 (19.5) Max .380 (9.65) Max .475 (12.09) Max Anode .505 (12.85) Max .


NTE5517 NTE5519 NTE552


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