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PM75RLA060

Mitsubishi Electric Semiconductor

Intelligent Power Module

MITSUBISHI PM75RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM75RLA060 FEATURE a) Adopting new ...


Mitsubishi Electric Semiconductor

PM75RLA060

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MITSUBISHI PM75RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM75RLA060 FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by 10%, thickness by 22% from S-DASH series. d) Current rating of brake part increased. 67% for the current rating of inverter part. 3φ 75A, 600V Current-sense IGBT type inverter 50A, 600V Current-sense regenerative brake IGBT Monolithic gate drive & protection logic Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) Acoustic noise-less 5.5kW/7.5kW class inverter application UL Recognized Yellow Card No.E80276(N) File No.E80271 APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES 11 7 19.75 19.75 3.25 16 3-2 120 106 16 16 3-2 3-2 15.25 6-2 Dimensions in mm 2-φ5.5 MOUNTING HOLES 16 3 2-φ2.5 17.5 12 32 55 NP 12 (SCREWING DEPTH) 7 1 5 9 13 19 14.5 17.5 6-M5 NUTS B 10.75 32.75 U VW 23 23 19-s0.5 12 23 13 31 13.5 11.75 22 + – 1 0.5 Terminal code 1. VUPC 2. UFO 3. UP 4. VUP1 5. VVPC 6. VFO 7. VP 8. VVP1 9. VWPC 10. WFO 11. WP 12. VWP1 13. VNC 14. VN1 15. Br 16....




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