PMBD6100

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD6100 High-speed double diode Product specification Supersedes data of 1996 Sep 18 1999 May 11 Philips Semiconductors Product specification High-speed double diode FEATURES Small plastic SMD package High switching speed: max. 4 ns General application Continuous reverse voltage: max. 70 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 450 mA. APPLICATIONS High-speed switching in surface mounted circuits. 3 Top view handbook, 4 columns PMBD6100 PINNING PIN 1 2 3 DESCRIPTION anode (a1) anode (a2) common cathode DESCRIPTION The PMBD6100 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. 2 1 2 3 MAM108 1 Marking code: p5B = made in Hong Kong; t5B = made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current single diode loaded; note 1; see Fig.2 double diode loaded; note 1; see Fig.2 IFRM IFSM repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature T...