PMBF170

DISCRETE SEMICONDUCTORS DATA SHEET PMBF170 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits with applications in relay, high-speed and line transformer drivers. FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source on-resistance ID = 200 mA; VGS = 10 V Transfer admittance ID = 200 mA; VDS = 10 V PINNING - SOT23 1 2 3 = gate = source = drain VDS ± VGSO ID Ptot RDS(on) | Yfs| max. max. max. max. typ. max. min. typ. PMBF170 60 V 20 V 250 mA 300 mW 2.5 Ω 5.0 Ω 100 mS 200 mS Marking code: PMBF170 = PKX PIN CONFIGURATION handbook, halfpage 3 handbook, 2 columns d g 1 Top view 2 MSB003 MBB076 - 1 s Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipation...