PMBF4416A

DISCRETE SEMICONDUCTORS DATA SHEET PMBF4416; PMBF4416A N-channel field-effect transistor Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification N-channel field-effect transistor FEATURES Low noise Interchangeability of drain and source connections High gain. handbook, halfpage PMBF4416; PMBF4416A 3 d s DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable SOT23 envelope. These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers. PINNING - SOT23 PIN 1 2 3 drain gate QUICK REFERENCE DATA SYMBOL VDS PARAMETER drain-source voltage PMBF4416 PMBF4416A IDSS Ptot VGS(off) drain-source current total power dissipation gate-source cut-off voltage PMBF4416 PMBF4416A  Yfs  common-source transfer admittance VDS = 15 V; VGS = 0; f = 1 kHz VDS = 15 V; VGS = 0 − − 5 30 35 15 250 V V mA mW CONDITIONS MIN. MAX. UNIT DESCRIPTION source Fig.1 Simplified outline and symbol. g 1 Top view 2 MAM385 Marking codes: PMBF4416: P6A. PMBF4416A: M16. up to Tamb = 25 °C − VDS = 15 V; ID = 1 nA − −2.5 4.5 −6 −6 7.5 V V mS April 1995 2 Philips Semiconductors Product specification N-channel field-effect transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS PARAMETER drain-source voltage PMBF4416 PMBF4416A VGSO gate-source voltage PMBF4416 PMBF4416A VGDO gate-drain voltage PMBF4416 PMBF4416A IG Ptot Tstg Tj DC forward gate current t...