PMBF5484

DISCRETE SEMICONDUCTORS DATA SHEET PMBF5484; PMBF5485; PMBF5486 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification N-channel field-effect transistors FEATURES Low noise Interchangeability of drain and source connections High gain. handbook, halfpage PMBF5484; PMBF5485; PMBF5486 3 d s DESCRIPTION N-channel, symmetrical, silicon junction FETs in a surface-mountable SOT23 envelope. Intended for use in VHF/UHF amplifiers, oscillators and mixers. PINNING - SOT23 PIN 1 2 3 drain gate QUICK REFERENCE DATA SYMBOL VDS IDSS PARAMETER drain-source voltage drain current PMBF5484 PMBF5485 PMBF5486 Ptot VGS(off) total power dissipation gate-source cut-off voltage PMBF5484 PMBF5485 PMBF5486  Yfs  common source transfer admittance PMBF5484 PMBF5485 PMBF5486 VDS = 15 V; VGS = 0; f = 1 kHz 3 3.5 4 6 7 8 mS mS mS up to Tamb = 25 °C VDS = 15 V; ID = 1 nA −0.3 −0.5 −2 −3 −4 −6 V V V VDS = 15 V; VGS = 0 1 4 8 − 5 10 20 250 mA mA mA mW CONDITIONS MIN. − MAX. UNIT 25 V DESCRIPTION source Fig.1 Simplified outline and symbol. g 1 Top view 2 MAM385 MARKING CODES: PMBF5484: p6B PMBF5485: p6M PMBF5486: p6H April 1995 2 Philips Semiconductors Product specification N-channel field-effect transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VGDO IG Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage gate-drain voltage DC...