PMBS3904

DISCRETE SEMICONDUCTORS DATA SHEET PMBS3904 NPN general purpose transistor Product data sheet Supersedes data of 1999 Apr 22 2004 Feb 02 NXP Semiconductors NPN general purpose transistor Product data sheet PMBS3904 FEATURES Low current (max. 100 mA) Low voltage (max. 40 V). APPLICATIONS General purpose switching and amplification, e.g. telephony and professional communication equipment. PINNING PIN 1 2 3 base emitter collector DESCRIPTION DESCRIPTION NPN transistor in a plastic SOT23 package. PNP complement: PMBS3906. MARKING TYPE NUMBER PMBS3904 MARKING CODE(1) *O4 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. handbook, halfpage 3 3 1 1 Top view 2 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER PMBS3904 NAME − PACKAGE DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current capability peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C MIN. − − − − − − − −65 − −65 MAX. 60 40 6 100 200 200 250 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C 2004 Feb 02 2 NXP Semiconductors NPN gen...