DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBS3906 PNP general purpose transistor
Product specification...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PMBS3906
PNP general purpose
transistor
Product specification Supersedes data of 1997 May 20 1999 Apr 22
Philips Semiconductors
Product specification
PNP general purpose
transistor
FEATURES Low current (max. 100 mA) Low voltage (max. 40 V). APPLICATIONS General purpose switching and amplification, e.g. telephony and professional communication equipment. DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: PMBS3904.
handbook, halfpage
PMBS3906
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1
MARKING TYPE NUMBER PMBS3906 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗O6
Top view
2 1 2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −40 −40 −5 −100 −200 −200 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT
1999 Apr 22
2
Philips Semiconductors
Product specification
PNP general purpose
transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circu...