PMBT2369

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT2369 NPN switching transistor Product specification Supersedes data of 1997 Jun 02 1999 Apr 27 Philips Semiconductors Product specification NPN switching transistor FEATURES Low current (max. 200 mA) Low voltage (max. 15 V). APPLICATIONS High-speed switching, especially in portable equipment. DESCRIPTION NPN switching transistor in a SOT23 plastic package. MARKING TYPE NUMBER PMBT2369 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗1J Top view PMBT2369 PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 3 1 2 1 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open base open collector CONDITIONS open emitter − − − − − − − −65 − −65 MIN. MAX. 40 15 5 200 300 100 250 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C 1999 Apr 27 2 Philips Semiconductors Product specification NPN switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACT...