PMBT3906

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT3906 PNP switching transistor Product specification Supersedes data of 1997 May 05 1999 Apr 27 Philips Semiconductors Product specification PNP switching transistor FEATURES Low current (max. 100 mA) Low voltage (max. 40 V). APPLICATIONS Telephony and professional communication equipment. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: PMBT3904. MARKING TYPE NUMBER PMBT3906 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗2A Top view handbook, halfpage PMBT3906 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −40 −40 −6 −100 −200 −100 250 +150 +150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 27 2 Philips Semiconductors Product specification PNP switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 prin...