PMBT4403

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT4403 PNP switching transistor Product specification Supersedes data of 1997 May 05 1999 Apr 15 Philips Semiconductors Product specification PNP switching transistor FEATURES High current (max. 600 mA) Low voltage (max. 40 V). APPLICATIONS Industrial and consumer switching applications. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: PMBT4401. MARKING TYPE NUMBER PMBT4403 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗2T Top view handbook, halfpage PMBT4403 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −40 −40 −5 −600 −800 −200 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 15 2 Philips Semiconductors Product specification PNP switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-...