PMBT5088

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT5088 NPN general purpose transistor Product specification Supersedes data of 1997 Jul 11 1999 Apr 15 Philips Semiconductors Product specification NPN general purpose transistor FEATURES Low current (max. 100 mA) Low voltage (max. 30 V). APPLICATIONS Intended for low-noise input stages in audio equipment. DESCRIPTION NPN transistor in a SOT23 plastic package. MARKING TYPE NUMBER PMBT5088 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗1Q Top view PMBT5088 PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 3 1 2 1 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 35 30 4.5 100 200 200 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 15 2 Philips Semiconductors Product specification NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit boar...