DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D088
PMBT5401 PNP high-voltage transistor
Product specification Super...
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D088
PMBT5401
PNP high-voltage
transistor
Product specification Supersedes data of 1997 Apr 09 1999 Apr 15
Philips Semiconductors
Product specification
PNP high-voltage
transistor
FEATURES Low current (max. 300 mA) High voltage (max. 150 V). APPLICATIONS Switching and amplification in high voltage applications such as telephony. DESCRIPTION
PNP high-voltage
transistor in a SOT23 plastic package.
NPN complement: PMBT5550.
handbook, halfpage
PMBT5401
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3 1
MARKING TYPE NUMBER PMBT5401 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗2L
Top view
2 1 2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −160 −150 −5 −300 −600 −100 250 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C
1999 Apr 15
2
Philips Semiconductors
Product specification
PNP high-voltage
transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Not...