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PMBZ5253B Dataheets PDF



Part Number PMBZ5253B
Manufacturers Philips
Logo Philips
Description Voltage regulator diodes
Datasheet PMBZ5253B DatasheetPMBZ5253B Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBZ5226B to PMBZ5257B Voltage regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 17 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 250 mW • Tolerance series: ±5% • Working voltage range: nom. 3.3 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • General regulation functions. handbook, halfpage 2 PMBZ5226B to PM.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBZ5226B to PMBZ5257B Voltage regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 17 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 250 mW • Tolerance series: ±5% • Working voltage range: nom. 3.3 to 75 V • Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS • General regulation functions. handbook, halfpage 2 PMBZ5226B to PMBZ5257B PINNING PIN 1 2 3 anode not connected cathode DESCRIPTION 1 2 n.c. 1 3 DESCRIPTION Low-power voltage regulator diodes in small SOT23 plastic SMD packages. The series consists of 32 types with nominal working voltages from 3.3 to 75 V. MARKING TYPE NUMBER PMBZ5226B PMBZ5227B PMBZ5228B PMBZ5229B PMBZ5230B PMBZ5231B PMBZ5232B PMBZ5233B Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗8A ∗8B ∗8C ∗8D ∗8E ∗8F ∗8G ∗8H TYPE NUMBER PMBZ5234B PMBZ5235B PMBZ5236B PMBZ5237B PMBZ5238B PMBZ5239B PMBZ5240B PMBZ5241B MARKING CODE(1) ∗8J ∗8K ∗8L ∗8M ∗8N ∗8P ∗8Q ∗8R TYPE NUMBER PMBZ5242B PMBZ5243B PMBZ5244B PMBZ5245B PMBZ5246B PMBZ5247B PMBZ5248B PMBZ5249B MARKING CODE(1) ∗8S ∗8T ∗8U ∗8V ∗8W ∗8X ∗8Y ∗8Z TYPE NUMBER PMBZ5250B PMBZ5251B PMBZ5252B PMBZ5253B PMBZ5254B PMBZ5255B PMBZ5256B PMBZ5257B MARKING CODE 81A 81B 81C 81D 81E 81F 81G 81H 3 Top view MAM243 Fig.1 Simplified outline (SOT23) and symbol. 1999 May 17 2 Philips Semiconductors Product specification Voltage regulator diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot PZSM Tstg Tj Notes 1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm. 2. Device mounted on an FR4 printed circuit-board. ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage PARAMETER continuous forward current PMBZ5226B to PMBZ5257B CONDITIONS − MIN. see Table “Per type” − − − −65 − MAX. 200 UNIT mA non-repetitive peak reverse current tp = 100 µs; square wave; Tj = 25 °C prior to surge total power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 Tamb = 25 °C; note 2 tp = 100 µs; square wave; Tj = 25 °C prior to surge; see Fig.2 300 250 40 +150 150 mW mW W °C °C CONDITIONS IF = 200 mA; see Fig.3 MAX. 1.1 UNIT V 1999 May 17 3 1999 May 17 4 Philips Semiconductors Per type Tj = 25 °C unless otherwise specified. TEST WORKING DIFFERENTIAL TEMP. COEFF. SZ (%/K) CURRENT VOLTAGE RESISTANCE rdif (Ω) at IZ(2) IZtest (mA) VZ (V)(1) at IZtest at IZ = 0.25 mA NOM. PMBZ5226B PMBZ5227B PMBZ5228B PMBZ5229B PMBZ5230B PMBZ5231B PMBZ5232B PMBZ5233B PMBZ5234B PMBZ5235B PMBZ5236B PMBZ5237B PMBZ5238B PMBZ5239B PMBZ5240B PMBZ5241B PMBZ5242B PMBZ5243B PMBZ5244B PMBZ5245B PMBZ5246B PMBZ5247B PMBZ5248B PMBZ5249B PMBZ5250B PMBZ5251B 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 2.


PMBZ5252B PMBZ5253B PMBZ5254B


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