PMD16K SERIES NPN PMD17K SERIES PNP
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
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PMD16K SERIES
NPN PMD17K SERIES
PNP
COMPLEMENTARY SILICON DARLINGTON POWER
TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR PMD16K, PMD17K series types are complementary silicon Darlington power
transistors, manufactured by the epitaxial base process, mounted in a hermetically sealed metal package, and designed for power switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC
PMD16K60 PMD17K60
60
60
PMD16K80 PMD17K80
80 80 5.0 20 40 500 200 -65 to +200 0.875
PMD16K100 PMD17K100 UNITS
100 V 100 V
V A A mA W °C °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICER
VCE=Rated VCEO, RBE=1.0kΩ
ICER
VCE=Rated VCEO, RBE=1.0kΩ, TC=150°C
IEBO
VEB=5.0V
BVCEO IC=100mA (PMD16K60, 17K60)
60
BVCEO IC=100mA (PMD16K80, 17K80)
80
BVCEO IC=100mA (PMD16K100, 17K100)
100
VCE(SAT) IC=10A, IB=40mA
VBE(SAT) IC=10A, IB=40mA
VBE(ON) VCE=3.0V, IC=10A
hFE VCE=3.0V, IC=10A (PMD16K series) 1.0K
hFE VCE=3.0V, IC=10A (PMD17K series) 800
hfe VCE=3.0V, IC=7.0A, f=1.0kHz
300
fT VCE=3.0V, IC=7.0A, f=1.0MHz
4.0
Cob VCB=10V, IE=0, f=1.0MHz
MAX 1.0 5.0 2.0
2.0 2.8 2.8 20K 20K
400
UNITS mA mA mA V V ...
