PMEG3002AEB

DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG3002AEB Low VF MEGA Schottky barrier diode Product specification 2002 May 06 Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode FEATURES Forward current: 0.2 A Reverse voltage: 30 V Very low forward voltage Ultra small SMD package. APPLICATIONS Ultra high-speed switching High efficiency DC/DC conversion Voltage clamping Inverse-polarity protection Low voltage rectification Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD523 (SC-79) ultra small SMD plastic package. 4 columns PMEG3002AEB PINNING PIN 1 2 DESCRIPTION cathode anode 1 2 MGU328 Marking code: B1. The marking bar indicates the cathode. Fig.1 Simplified outline (SOD523; SC-79) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR IF IFRM IFSM Tstg Tj Tamb PARAMETER continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.5 tp = 8.3 ms half sinewave; JEDEC method CONDITIONS − − − − −65 − −65 MIN. MAX. 30 200 300 1 +150 125 +125 V mA mA A °C °C °C UNIT 2002 May 06 2 Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode ELECTRICAL CHARACTER...