PMMT591A

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMMT591A PNP BISS transistor Product specification Supersedes data of 1999 May 21 1999 Aug 04 Philips Semiconductors Product specification PNP BISS transistor FEATURES High current (max. 1 A) Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS Battery powered units where high current and low power consumption are important. DESCRIPTION PNP BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. NPN complement: PMMT491A. MARKING TYPE NUMBER PMMT591A Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. MARKING CODE(1) 9B∗ Top view handbook, halfpage PMMT591A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −40 −40 −5 −1 −2 −1 250 +150 150 +150 V V V A A A mW °C °C °C UNIT 1999 Aug 04 2 Philips Semiconductors Product specification PNP BISS transistor TH...