PMSS3904

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMSS3904 NPN switching transistor Product specification Supersedes data of 1997 Sep 03 1999 May 27 Philips Semiconductors Product specification NPN switching transistor FEATURES Low current (max. 100 mA) Low voltage (max. 40 V). APPLICATIONS General purpose switching and amplification Telephony and professional communication equipment. DESCRIPTION NPN switching transistor in an SC-70 (SOT323) plastic package. PNP complement: PMSS3906. PINNING PIN 1 2 3 base emitter collector PMSS3904 DESCRIPTION handbook, halfpage 3 3 1 MARKING CODE TYPE NUMBER PMSS3904 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗04 Fig.1 2 1 Top view 2 MAM062 Simplified outline (SC-70; SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 60 40 6 100 200 200 200 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 May 27 2 Philips Semiconductors Product specification NPN switching transistor THERMAL CHARAC...