PMST2907A

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D187 PMST2907A PNP switching transistor Product specification Supersedes data of 1997 Jul 08 1999 Apr 22 Philips Semiconductors Product specification PNP switching transistor FEATURES Low current (max. 200 mA) Low voltage (max. 60 V). APPLICATIONS Medium power switching General purpose amplification. handbook, halfpage PMST2907A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 DESCRIPTION PNP switching transistor in an SC-70; SOT323 plastic package. NPN complement: PMST2222A. MARKING TYPE NUMBER PMST2907A Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗2F Fig.1 1 Top view 2 MAM048 3 1 2 Simplified outline (SC-70; SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −60 −60 −5 −200 −200 −100 200 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 22 2 Philips Semiconductors Product specification PNP switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transisto...