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PMST5551 Dataheets PDF



Part Number PMST5551
Manufacturers Philips
Logo Philips
Description NPN Transistor
Datasheet PMST5551 DatasheetPMST5551 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST5550; PMST5551 NPN high-voltage transistors Product specification Supersedes data of 1997 May 20 1999 Apr 29 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES • Low current (max. 300 mA) • High voltage (max. 160 V). APPLICATIONS • Switching and amplification in high voltage applications such as telephony. DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. PNP complement: PMST5401. .

  PMST5551   PMST5551



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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST5550; PMST5551 NPN high-voltage transistors Product specification Supersedes data of 1997 May 20 1999 Apr 29 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES • Low current (max. 300 mA) • High voltage (max. 160 V). APPLICATIONS • Switching and amplification in high voltage applications such as telephony. DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. PNP complement: PMST5401. PINNING PIN 1 2 3 PMST5550; PMST5551 DESCRIPTION base emitter collector handbook, halfpage 3 3 1 MARKING TYPE NUMBER PMST5550 PMST5551 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT323) and symbol. MARKING CODE(1) ∗1F ∗G3 2 1 Top view 2 MAM062 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage PMST5550 PMST5551 VCEO collector-emitter voltage PMST5550 PMST5551 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 140 160 6 300 600 100 200 +150 150 +150 V V V mA mA mA mW °C °C °C CONDITIONS open emitter − − 160 180 V V MIN. MAX. UNIT 1999 Apr 29 2 Philips Semiconductors Product specification NPN high-voltage transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current PMST5550 collector cut-off current PMST5551 IEBO hFE emitter cut-off current DC current gain PMST5550 CONDITIONS IE = 0; VCB = 100 V PARAMETER thermal resistance from junction to ambient PMST5550; PMST5551 CONDITIONS note 1 VALUE 625 UNIT K/W MIN. − − − − − 60 60 20 80 80 30 − MAX. 100 100 50 50 50 − 250 − − 250 − 150 UNIT nA µA nA µA nA IE = 0; VCB = 100 V; Tamb = 100 °C IE = 0; VCB = 120 V IE = 0; VCB = 120 V; Tamb = 100 °C IC = 0; VEB = 4 V VCE = 5 V; (see Fig.2) IC = 1 mA IC = 10 mA IC = 50 mA; note 1 DC current gain PMST5551 VCE = 5 V; (see Fig.2) IC = 1 mA IC = 10 mA IC = 50 mA; note 1 VCEsat collector-emitter saturation voltage collector-emitter saturation voltage PMST5550 PMST5551 IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA; note 1 mV − − IC = 10 mA; IB = 1 mA IC = 50 mA; IB = 5 mA; note 1 − − IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 10 Hz to 15.7 kHz − − 100 − − 250 200 1 1.2 1 6 30 300 8 mV mV V V V pF pF MHz dB VBEsat base-emitter saturation voltage base-emitter saturation voltage PMST5550 PMST5551 Cc Ce fT F collector capacitance emitter capacitance transition frequency noise figure PMST5551 Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1999 Apr 29 3 Philips Semiconductors Product specification NPN high-voltage transistors PMST5550; PMST5551 handbook, full pagewidth 160 MGD814 hFE 120 VCE = 5 V 80 40 0 10−1 1 10 102 IC mA 103 Fig.2 DC current gain; typical values. 1999 Apr 29 4 Philips Semiconductors Product specification NPN high-voltage transistors PACKAGE OUTLINE Plastic surface mounted package; 3 leads PMST5550; PMST5551 SOT323 D B E A X y HE v M A 3 Q A A1 c 1 e1 e bp 2 w M B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 29 5 Philips Semiconductors Product specification NPN high-voltage transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values PMST5550; PMST5551 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products .


PMST5550 PMST5551 PMST6428


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