PMSTA43

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D187 PMSTA42; PMSTA43 NPN high-voltage transistors Product specification Supersedes data of 1997 Jun 19 1999 May 21 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES High current (max. 500 mA) High voltage (max. 200 V). APPLICATIONS High-voltage switching in telephony applications. DESCRIPTION NPN high-voltage transistor in a SOT323 plastic package. PNP complements: PMSTA92 and PMSTA93. MARKING TYPE NUMBER PMSTA42 PMSTA43 Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 MARKING CODE(1) ∗1D ∗1E 1 Top view handbook, halfpage PMSTA42; PMSTA43 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 2 MAM062 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage PMSTA42 PMSTA43 VCEO collector-emitter voltage PMSTA42 PMSTA43 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 300 200 6 100 200 100 200 +150 150 +150 V V V mA mA mA mW °C °C °C CONDITIONS open emitter − − 300 200 V V MIN. MAX. UNIT 1999 May 21 2 Philips Semiconductors Product specification NPN high-vo...