Document
Phototransistors
PN163NC
Silicon NPN Phototransistor
3.5±0.3 Gate the rest 2.4 1.1 0.8 max. 1.1 0.8
Unit : mm
3.0±0.3 1.95±0.25 1.4±0.2 0.9 0.5
For optical control systems Features
High sensitivity Fast response : tr = 4 µs (typ.) Adoption of visible light cutoff resin Ultraminiature, thin side-view type package
ø1.1 R0.5
12 min. Not soldered 2.15 max.
2-0.5±0.15
0.3±0.15
2
2.54
1
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Collector to emitter voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO IC PC Topr Tstg Ratings 20 20 50 –25 to +85 –30 to +100 Unit V mA mW ˚C ˚C
1: Collector 2: Emitter
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Dark current Sensitivity to infrared emitters Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage
*1 *2
Symbol ICEO SIR θ tr*2 tf*2 VCE(sat)
*1
Conditions VCE = 10V VCE = 10V, H = VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA RL = 100Ω ICE(L) = 3µA, H = 15µW/cm2 15µW/cm2
min 6
typ
max 0.2 40
Unit µA µA nm deg. µs µs
λP
850 25 4 4 0.5
V
Measurements were made using infrared light (λ = 940 nm) as a light source. Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value)
,, ,, ,,
50Ω
1
Phototransistors
PN163NC
PC — Ta
60 3.0
ICE(L) — VCE
10 2
ICE(L) — L
ICE(L) (mA)
VCE = 10V Ta = 25˚C T = 2856K
PC (mW)
50
ICE(L) (mA)
Ta = 25˚C T = 2856K 2.5 L = 1000 lx
10
Collector power dissipation
40
2.0
Collector photo current
Collector photo current
30
1.5 500 lx 1.0
1
20
10 –1
10
0.5
100 lx
0 – 20
0
20
40
60
80
100
0
0
4
8
12
16
20
24
10 –2
1
10
10 2
10 3
Ambient temperature
Ta (˚C )
Collector to emitter voltage
VCE (V)
Illuminance
L (lx)
ICEO — Ta
10 2 VCE = 10V 10 2
ICE(L) — Ta
VCE = 10V T = 2856K 100
Spectral sensitivity characteristics
VCE = 10V Ta = 25˚C
ICE(L) (mA)
ICEO (nA)
10
10
S (%) Relative sensitivity
0 40 80 120
80
Dark current
1
Collector photo current
60
40
1
10 –1
20
10 –2 – 20
0
20
40
60
80
100
10 –1 – 40
0 600
700
800
900
1000 1100 1200
Ambient temperature
Ta (˚C )
Ambient temperature
Ta (˚C )
Wavelength λ (nm)
Directivity characteristics
0˚ 100 10˚ 20˚ 10 4
tr — ICE(L)
VCC = 10V Ta = 25˚C 10 4
tf — ICE(L)
VCC = 10V Ta = 25˚C
80 70 60 50 40 30 20
Relative sensitivity S (%)
90
30˚
10 3
10 3
tr (µs)
40˚ 50˚ 60˚ 70˚ 80˚ 90˚
10 2
tf (µs) Fall time
10 2 RL = 1kΩ 500Ω 100Ω 1
Rise time
10
RL = 1kΩ 500Ω 100Ω
10
1
10 –1 10 –2
10 –1
1
10
10 2
10 –1 10 –2
10 –1
1
10
10 2
Collector photo current
ICE(L) (mA)
Collector photo current
ICE(L) (mA)
.