PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
PN2222A
MMBT2222A
C
PZT2222A
C
E C B
E C B
TO-92
E
SOT-23
Mar...
PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
PN2222A
MMBT2222A
C
PZT2222A
C
E C B
E C B
TO-92
E
SOT-23
Mark: 1P
B
SOT-223
MMPQ2222
E2 B2 E3 B3 E4 B4
NMT2222
C2 E1 C1
E1
B1
SOIC-16
pin #1 C1
C2 C1
C3 C2
C4 C4 C3
B2 E2
SOT-6
Mark: .1B
B1
NPN General Purpose Amplifier
This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
40 75 6.0 1.0 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
1997 Fairchild Semiconductor Corporation
PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO IBL Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Cu...