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PN2369 Dataheets PDF



Part Number PN2369
Manufacturers Philips
Logo Philips
Description NPN transistors
Datasheet PN2369 DatasheetPN2369 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN2369; PN2369A NPN switching transistors Product specification Supersedes data of 1997 May 07 1999 Apr 14 Philips Semiconductors Product specification NPN switching transistors FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching applications. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PINNING PIN 1 2 3 collector base emitter PN2369; PN2369A DESCRIPTION 1 h.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PN2369; PN2369A NPN switching transistors Product specification Supersedes data of 1997 May 07 1999 Apr 14 Philips Semiconductors Product specification NPN switching transistors FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching applications. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PINNING PIN 1 2 3 collector base emitter PN2369; PN2369A DESCRIPTION 1 handbook, halfpage 2 3 1 2 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −55 − −55 MIN. MAX. 40 15 5 200 300 100 500 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 14 2 Philips Semiconductors Product specification NPN switching transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain PN2369 CONDITIONS IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tamb = 125 °C IC = 0; VEB = 4 V IC = 10 mA; VCE = 1 V IC = 10 mA; VCE = 1 V; Tamb = −55 °C IC = 100 mA; VCE = 2 V DC current gain PN2369A IC = 10 mA; VCE = 350 mV IC = 10 mA; VCE = 350 mV; Tamb = −55 °C IC = 30 mA; VCE = 400 mV IC = 100 mA; VCE = 1 V VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 1 mA PN2369 collector-emitter saturation voltage IC = 10 mA; IB = 1 mA PN2369A IC = 10 mA; IB = 10 mA IC = 30 mA; IB = 3 mA IC = 100 mA; IB = 10 mA VBEsat Cc fT ton td tr toff ts tf base-emitter saturation voltage collector capacitance transition frequency IC = 10 mA; IB = 1 mA IE = ie = 0; VCB = 5 V; f = 1 MHz PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 PN2369; PN2369A VALUE 250 UNIT K/W MIN. − − − 40 20 20 40 20 30 20 − − − − − 700 − TYP. − − − − − − − − − − − − − − − − − − MAX. UNIT 400 30 100 120 − − 120 − − − 250 200 300 250 500 850 4 − mV mV mV mV mV mV pF MHz nA µA nA IC = 10 mA; VCE = 10 V; f = 100 MHz 500 ICon = 10 mA; IBon = 3 mA; IBoff = −1.5 mA − − − − − − Switching times (between 10% and 90% levels); (see Fig.2) turn-on time delay time rise time turn-off time storage time fall time 8 − − 10 − − 10 4 6 20 10 10 ns ns ns ns ns ns 1999 Apr 14 3 Philips Semiconductors Product specification NPN switching transistors PN2369; PN2369A handbook, full pagewidth VBB VCC RB (probe) oscilloscope 450 Ω Vi R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope MLB826 Vi = 0.5 V to 4.2 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 1 ns. R1 = 56 Ω; R2 = 1 kΩ; RB = 1 kΩ; RC = 270 Ω. VBB = 0.2 V; VCC = 2.7 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.2 Test circuit for switching times. 1999 Apr 14 4 Philips Semiconductors Product specification NPN switching transistors PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads PN2369; PN2369A SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 14 5 Philips Semiconductors Product specification NPN switching transistors DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values PN2369; PN2369A This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in .


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