DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PN3439; PN3440 NPN high-voltage transistors
Product specifica...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PN3439; PN3440
NPN high-voltage
transistors
Product specification Supersedes data of 1997 Jun 17 File under Discrete Semiconductors, SC04 1997 Sep 04
Philips Semiconductors
Product specification
NPN high-voltage
transistors
FEATURES Low current (max. 100 mA) High voltage (max. 350 V). APPLICATIONS Telephony and professional communication equipment. DESCRIPTION
NPN high-voltage
transistor in a TO-92; SOT54 plastic package.
1 handbook, halfpage
PN3439; PN3440
PINNING PIN 1 2 3 collector base emitter DESCRIPTION
2 3
1 2 3
MAM279
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage PN3439 PN3440 VCEO collector-emitter voltage PN3439 PN3440 ICM Ptot hFE hFE fT peak collector current total power dissipation DC current gain PN3439 DC current gain PN3440 transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz IC = 20 mA; VCE = 10 V 40 70 − − MHz Tamb ≤ 25 °C IC = 2 mA; VCE = 10 V 30 − open base − − − − 350 250 200 500 V V mA mW open emitter − − 400 300 V V CONDITIONS MIN. MAX. UNIT
1997 Sep 04
2
Philips Semiconductors
Product specification
NPN high-voltage
transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PN3439 PN3440 VCEO collector-emitter voltage PN3439 PN3440 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total po...