RF Amplifier. PN3563 Datasheet

PN3563 Amplifier. Datasheet pdf. Equivalent

Part PN3563
Description NPN RF Amplifier
Feature PN3563 Discrete POWER & Signal Technologies PN3563 C BE TO-92 NPN RF Amplifier This device is .
Manufacture Fairchild Semiconductor
Datasheet
Download PN3563 Datasheet

PN3563 Discrete POWER & Signal Technologies PN3563 C BE PN3563 Datasheet
Small Signal Transistors TO-92 Case (Continued) TYPE NO. DES PN3563 Datasheet
Recommendation Recommendation Datasheet PN3563 Datasheet




PN3563
PN3563
Discrete POWER & Signal
Technologies
C
BE
TO-92
NPN RF Amplifier
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to 30 mA range.
Sourced from Process 43. See PN918 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
15
VCBO
Collector-Base Voltage
30
VEBO
Emitter-Base Voltage
2.0
IC Collector Current - Continuous
50
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
PN3563
350
2.8
125
357
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation



PN3563
Electrical Characteristics
Symbol
Parameter
TA= 25°C unless otherwise noted
Test Conditions
NPN RF Amplifier
(continued)
Min Max Units
OFF CHARACTERISTICS
VCEO(sus)
Collector-Emitter Sustaining Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO Collector Cutoff Current
IC = 3.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 15 V, IE = 0
VCB = 15 V, TA = 150°C
ON CHARACTERISTICS*
hFE DC Current Gain
IC = 8.0 mA, VCE = 10 V
15
30
2.0
20
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
Cobo
Output Capacitance
Cibo Input Capacitance
hfe Small-Signal Current Gain
rb’CC
Collector Base Time Constant
IC = 8.0 mA, VCE = 10 V,
f = 100 MHz
VCB = 10 V, IE = 0, f = 1.0 MHz
VCB = 0, IE = 0, f = 1.0 MHz
VBE = 0.5 V, IC = 0, f = 140 MHz
IC = 8.0 mA, VCE = 10 V,
f = 1.0 kHz
IC = 8.0 mA, VCE = 10 V,
f = 79.8 MHz
600
20
8.0
FUNCTIONAL TEST
Gpe Amplifier Power Gain
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
IC = 8.0 mA, VCB = 10 V,
f = 200 MHz
14
V
V
V
0.05 µA
5.0 nA
200
1500
1.7
3.0
2.0
250
25
MHz
pF
pF
pF
pS
26 dB





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