Purpose Amplifier. PN3638 Datasheet

PN3638 Amplifier. Datasheet pdf. Equivalent

Part PN3638
Description PNP General Purpose Amplifier
Feature PN3638 / PN3638A Discrete POWER & Signal Technologies PN3638 PN3638A C BE TO-92 PNP General Pu.
Manufacture Fairchild Semiconductor
Datasheet
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PN3638
PN3638
PN3638A
Discrete POWER & Signal
Technologies
C
BE
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 63. See PN2907A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
25
VCBO
Collector-Base Voltage
25
VEBO
Emitter-Base Voltage
4.9
IC Collector Current - Continuous
800
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
PN3638/A
625
5.0
83.3
200
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation



PN3638
Electrical Characteristics
Symbol
Parameter
PNP General Purpose Amplifier
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CES
V(BR)CBO
Collector-Emitter Breakdown
Voltage*
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
V(BR)EBO
ICES
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
IC = 10 mA, IB = 0
IC = 100 µA, IB = 0
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCE = 15 V, IE = 0
VCE = 15 V, IE = 0, TA = 65°C
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE = 1.0 V, IC = 50 mA
PN3638
PN3638A
VCE = 2.0 V, IC = 300 mA
PN3638
PN3638A
VCE = 10 V, IC = 100 mA
PN3638
PN3638A
VCE = 10 V, IC = 1.0 mA
PN3638A
IC = 50 mA, IB = 2.5 mA
IC = 300 mA, IB = 30 mA
IC = 50 mA, IB = 2.5 mA
IC = 300 mA, IB = 30 mA
SMALL SIGNAL CHARACTERISTICS
Cob Output Capacitance
Cib Input Capacitance
hfe Small-Signal Current Gain
hie Input Impedance
hoe Output Admittance
hre Voltage Feedback Ratio
VCB = 10 V, f = 1.0 MHz
PN3638
PN3638A
VBE = 0.5 V, f = 1.0 MHz
PN3638
PN3638A
IC = 50 mA, VCE = 3.0 V,
f = 100 MHz
PN3638
PN3638A
IC = 10 mA, VCE = 10 V,
f = 1.0 kHz
PN3638
PN3638A
IC = 10 mA, VCE = 10 V,
f = 1.0 kHz
PN3638
PN3638A
SWITCHING CHARACTERISTICS
ton Turn-on Time
td Delay Time
tr Rise Time
toff Turn-off Time
ts Storage Time
tf Fall Time
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCC = 10 V, IC = 300 mA,
IB1 = 30 mA
VCC = 10 V, IC = 300 mA
IB1 = I B2 = 30 mA
25
25
25
4.0
30
100
30
20
20
80
100
0.8
1.0
1.5
25
100
75
20
70
170
140
70
V
V
V
V
35 nA
2.0 µA
0.25 V
1.0 V
1.1 V
2.0 V
20 pF
10 pF
65 pF
25 pF
2.0 k
1.2 µmhos
26 x10-4
15 x10-4
ns
ns
ns
ns
ns
ns





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