Switching Transistor. PN3640 Datasheet

PN3640 Transistor. Datasheet pdf. Equivalent


Part PN3640
Description PNP Switching Transistor
Feature PN3640 / MMBT3640 Discrete POWER & Signal Technologies PN3640 MMBT3640 C E C B TO-92 E SOT-23 .
Manufacture Fairchild Semiconductor
Datasheet
Download PN3640 Datasheet


PN3640 / MMBT3640 Discrete POWER & Signal Technologies PN3 PN3640 Datasheet
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-111 PN3640 Datasheet
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-111 PN3640 Datasheet
Recommendation Recommendation Datasheet PN3640 Datasheet




PN3640
Discrete POWER & Signal
Technologies
PN3640
MMBT3640
C
C
BE
TO-92
SOT-23
Mark: 2J
E
B
PNP Switching Transistor
This device is designed for very high speed saturate switching at
collector currents to 100 mA. Sourced from Process 65. See
PN4258 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
12
VCBO
Collector-Base Voltage
12
VEBO
Emitter-Base Voltage
4.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
PN3640
350
2.8
125
357
*MMBT3640
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation



PN3640
PNP Switching Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICES
Collector-Emitter Breakdown Voltage*
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IB Base Current
IC = 10 mA, IB = 0
IC = 100 µA, VBE = 0
IC = 100 µA, IE = 0
IE = 100 µA, IC = 0
VCE = 6.0 V, VBE = 0
VCE = 6.0 V, VBE = 0, TA = 65°C
VCE = 6.0 V, VBE = 0
12
12
12
4.0
0.01
1.0
10
V
V
V
V
µA
µA
nA
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, VCE = 0.3 V
IC = 50 mA, VCE = 1.0 V
IC = 10 mA, IB = 0.5 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC= 10 mA, IB= 1.0 mA,TA =65°C
IC = 10 mA, IB = 0.5 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
30
20
0.75
0.8
120
0.3
0.2
0.6
0.25
0.95
1.0
1.5
V
V
V
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
Cobo
Output Capacitance
Cibo Input Capacitance
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
VCB = 5.0 V, IE = 0,
f = 1.0 MHz
VBE = 0.5 V, IC = 0,
f = 1.0 MHz
500 MHz
3.5 pF
3.5 pF
SWITCHING CHARACTERISTICS
td Delay Time
tr Rise Time
ts Storage Time
tf Fall Time
ton Turn-On Time
toff Turn-Off Time
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCC = 6.0 V, VBE(off) = 1.9 V,
IC = 50 mA, IB1 = 5.0 mA
VCC = 6.0 V, IC = 50 mA,
IB1 = IB2 = 5.0 mA
VCC = 6.0 V, VBE(off) = 1.9 V,
IC = 50 mA, IB1 = 5.0 mA
VCC = 1.5 V, IC = 10 mA,
IB1 = IB2 = 0.5 mA
VCC = 6.0 V, VBE(off) = 1.9 V,
IC = 50 mA, IB1 = 5.0 mA
VCC = 1.5 V, IC = 10 mA,
IB1 = IB2 = 0.5 mA
10 ns
20 ns
20 ns
12 ns
25 ns
60 ns
35 ns
75 ns







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