Purpose Amplifier. PN3643 Datasheet

PN3643 Amplifier. Datasheet pdf. Equivalent

Part PN3643
Description NPN General Purpose Amplifier
Feature PN3643 Discrete POWER & Signal Technologies PN3643 C BE TO-92 NPN General Purpose Amplifier Th.
Manufacture Fairchild Semiconductor
Datasheet
Download PN3643 Datasheet

PN3643 Discrete POWER & Signal Technologies PN3643 C BE PN3643 Datasheet
PN3643 Datasheet
www.DataSheet4U.com 145 Adams Avenue, Hauppauge, NY 11788 U PN3643 Datasheet
PN3643 Datasheet
Recommendation Recommendation Datasheet PN3643 Datasheet




PN3643
PN3643
Discrete POWER & Signal
Technologies
C
BE
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
30
VCBO
Collector-Base Voltage
60
VEBO
Emitter-Base Voltage
5.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
500
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
PN3643
625
5.0
83.3
200
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation



PN3643
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0
30
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 µA, IE = 0
60 V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0 V
ICES Collector Cutoff Current
VCE = 50 V, IE = 0
VCE = 50 V, IE = 0, TA = +65 °C
50 nA
1.0 µA
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VCE = 10 V, IC = 150 mA
VCE = 10 V, IC = 500 mA
IC = 150 mA, IB = 15 mA
100 300
20
0.22
V
SMALL SIGNAL CHARACTERISTICS
Cob Output Capacitance
η Collector Efficiency
Gpe Amplifier Power Gain
hfe Small-Signal Current Gain
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCB = 10 V, f = 140 kHz,
VCE = 15 V, f = 30 MHz,
Rg = 140 , RL = 260
VCE = 15 V, f = 30 MHz,
Rg = 140 , RL = 260
IC = 50 mA, VCE = 5.0 V,
f = 100 MHz
8.0 pF
60 %
10 dB
2.5





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)