Purpose Amplifier. PN4250A Datasheet

PN4250A Amplifier. Datasheet pdf. Equivalent

Part PN4250A
Description PNP General Purpose Amplifier
Feature PN4250A Discrete POWER & Signal Technologies PN4250A C BE TO-92 PNP General Purpose Amplifier .
Manufacture Fairchild Semiconductor
Datasheet
Download PN4250A Datasheet

PN4250A Discrete POWER & Signal Technologies PN4250A C B PN4250A Datasheet
PN4250A Discrete POWER & Signal Technologies PN4250A C B PN4250A Datasheet
PN4250A Datasheet
PN4250A Datasheet
Small Signal Transistors TO-92 Case (Continued) TYPE NO. PN PN4250A Datasheet
Recommendation Recommendation Datasheet PN4250A Datasheet




PN4250A
PN4250A
Discrete POWER & Signal
Technologies
C
BE
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 68. See PN200 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
60
VCBO
VEBO
Collector-Base Voltage
Emitter-Base Voltage
60
5.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
500
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
PN4250A
625
5.0
83.3
200
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation



PN4250A
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CES
V(BR)CBO
Collector-Emitter Breakdown
Voltage*
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO Collector-Cutoff Current
IEBO Emitter-Cutoff Current
IC = 5.0 mA, IB = 0
IC = 10 µA, IB = 0
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 50 V, IE = 0
VEB = 3.0 V, IC = 0
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VCE = 5.0 V, IC = 100 µA
IC = 10 mA, IB = 0.5 mA
SMALL SIGNAL CHARACTERISTICS
Cob Output Capacitance
hfe Small-signal Current Gain
hie Input Im pedance
hoe Output Adm ittance
hre Voltage Feedback Ratio
NF Noise Figure
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCB = 5.0 V, f = 1.0 MHz
VCE = 5.0 V, IC = 1.0 m A,
f = 1.0 kHz
VCE = 5.0 V, IC = 250 µA,
RS = 1.0 k , f = 1.0 kHz,
BW = 150 Hz
VCE = 5.0 V, IC = 20 µA,
RS = 10 k, f = 1.0 kHz,
BW = 150 Hz
60 V
60 V
60 V
5.0 V
10 nA
20 nA
250 700
0.25
V
6.0 pF
250 800
6.0 20 k
5.0 50 µmhos
10 x10-4
2.0 dB
2.0 dB





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