DISCRETE SEMICONDUCTORS
DATA SHEET
PN4391 to 4393 N-channel silicon field-effect transistors
Product specification File...
DISCRETE SEMICONDUCTORS
DATA SHEET
PN4391 to 4393 N-channel silicon field-effect
transistors
Product specification File under Discrete Semiconductors, SC07 April 1989
Philips Semiconductors
Product specification
N-channel silicon field-effect
transistors
DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. PINNING 1 = gate 2 = source 3 = drain Note: Drain and source are interchangeable.
1 handbook, halfpage 2 3
PN4391 to 4393
g
MAM042
d s
Fig.1 Simplified outline and symbol, TO-92.
QUICK REFERENCE DATA Drain-source voltage Total power dissipation up to Tamb = 25 °C Drain current VDS = 20 V; VGS = 0 Gate-source cut-off voltage VDS = 20 V; ID = 1 nA Drain-source on-resistance ID = 1 mA; VGS = 0 RDS on max. 30 60 100 Ω −VGS off min. max. 4 10 2 5 0.5 V 3 V IDSS min. 50 25 5 mA Ptot max. PN4391 360 PN4392 PN4393 mW ± VDS max. 40 V
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage Gate-drain voltage Forward gate current (DC) Total power dissipation up to Tamb = 25 °C Storage temperature range Junction temperature Ptot Tstg Tj max. max. 360 −65 to+150 150 mW °C °C ± VDS −VGSO −VGDO IG max. max. max. max. 40 40 40 50 V V V mA
April 1989
2
Philips Semiconductors
Product specification
N-channel silicon field-effect
transistors
THERMAL RESISTANCE From junction to ambient in free air STATI...