Switches. PN4917 Datasheet

PN4917 Switches. Datasheet pdf. Equivalent

Part PN4917
Description PNP Small Signal General Purpose Amplifiers & Switches
Feature PN4917 Discrete POWER & Signal Technologies PN4917 C BE TO-92 PNP General Purpose Amplifier Th.
Manufacture Fairchild Semiconductor
Datasheet
Download PN4917 Datasheet

PN4917 Discrete POWER & Signal Technologies PN4917 C BE PN4917 Datasheet
PN4917 Discrete POWER & Signal Technologies PN4917 C BE PN4917 Datasheet
Small Signal Transistors TO-92 Case (Continued) TYPE NO. PN PN4917 Datasheet
Recommendation Recommendation Datasheet PN4917 Datasheet




PN4917
PN4917
Discrete POWER & Signal
Technologies
C
BE
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA. Sourced
from Process 66. See 2N3906 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
30
VCBO
Collector-Base Voltage
30
VEBO
Emitter-Base Voltage
5.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
200
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
PN4917
625
5.0
83.3
200
Units
V
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation



PN4917
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
V(BR)CES
Collector-Emitter Breakdown Voltage
IB Base Cutoff Current
ICES Collector Cutoff Current
IC = 10 mA, IB = 0
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
IC = 10 µA
VCE = 15 V
VCE = 15 V
VCE = 15 V, TA = 65 °C
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE = 1.0 V, IC = 100 µA
VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 10 mA
VCE = 1.0 V, IC = 50 mA
IC = 1.0 mA, IB = 0.1 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 1.0 mA, IB = 0.1 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
SMALL SIGNAL CHARACTERISTICS
Cob Output Capacitance
Cib Input Capacitance
hfe Small-Signal Current Gain
rb’Cc
Collector-Base Time Constant
NF Noise Figure
VCB = 10 V, f = 1.0 MHz
VEB = 0.5 V, f = 1.0 MHz
IC = 10 mA, VCE = 20 V,
f = 100 MHz
VCE = 20 V, IC = 10 mA
f = 80 MHz
VCE = 5.0 V, IC = 1.0 mA,
RS = 100 , f = 100 MHz
VCE = 5.0 V, IC = 100 µΑ,
RS = 1.0 k
SWITCHING CHARACTERISTICS
ton Turn-on Time
td Delay Time
tr Rise Time
toff Turn-off Time
ts Storage Time
tf Fall Time
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCC = 10 V, IC = 50 mA,
IB1 = 5.0 mA
VCC = 10 V, IC = 50 mA
IB1 = IB2 = 5.0 mA
30 V
30 V
5.0 V
30 V
25 nA
25 nA
25 µA
100
150
150 300
30
0.13
0.14
0.30
0.75
0.70 0.90
0.75 1.10
V
V
V
V
V
V
4.5 pF
8.0 pF
4.5
50 ps
6.0 dB
4.0 dB
40 ns
15 ns
40 ns
150 ns
140 ns
40 ns





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