NPN Phototransistors. PNA1401LF Datasheet

PNA1401LF Phototransistors. Datasheet pdf. Equivalent

Part PNA1401LF
Description Silicon NPN Phototransistors
Feature Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransistors PNA1401LF Unit : mm ø4.6±0.15 Glas.
Manufacture Panasonic Semiconductor
Datasheet
Download PNA1401LF Datasheet

Phototransistors PNA1401LF, PNZ102F Silicon NPN Phototransi PNA1401LF Datasheet
Recommendation Recommendation Datasheet PNA1401LF Datasheet




PNA1401LF
Phototransistors
PNA1401LF, PNZ102F
Silicon NPN Phototransistors
For optical control systems
Features
Flat window design which is suited to optical systems
Low dark current : ICEO = 5 nA (typ.)
Fast response : tr, tf = 3 µs (typ.)
Wide directional sensitivity
Base pin for easy circuit design (PNZ102F)
PNA1401LF
Unit : mm
ø4.6±0.15 Glass window
2-ø0.45±0.05
2.54±0.25
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
* PNZ102F only
Symbol
VCEO
VCBO*
VECO
VEBO*
IC
PC
Topr
Tstg
Ratings
30
40
5
5
50
150
–25 to +85
–30 to +100
Unit
V
V
V
V
mA
mW
˚C
˚C
21
ø5.75 max.
1: Emitter
2: Collector
PNZ102F
ø4.6±0.15
Unit : mm
Glass window
3-ø0.45±0.05
2.54±0.25
3
21
ø5.75 max.
1: Emitter
2: Base
3: Collector
1



PNA1401LF
PNA1401LF, PNZ102F
Phototransistors
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Collector photo current
Peak sensitivity wave length
Acceptance half angle
ICEO
ICE(L)
λP
θ
VCE = 10V
VCE = 10V, L = 100 lx*1
VCE = 10V
Measured from the optical axis to the half power point
0.1
Response time
tr, tf*2 VCC = 10V, ICE(L) = 5mA, RL = 100
Collector saturation voltage
VCE(sat)
L = 500 lx*1 PNA1401LF ICE(L) = 0.1mA
PNZ102F ICE(L) = 0.1mA
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
5
0.3
800
40
3
0.2
max
300
0.4
Unit
nA
mA
nm
deg.
µs
V
Sig.IN
50
VCC
(Input pulse)
Sig.OUT
RL
(Output pulse) td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
PC — Ta
200
160
120
80
40
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
2.0
900 lx
1000 lx
800 lx
700 lx
600 lx
1.6 500 lx
400 lx
1.2
300 lx
0.8
200 lx
0.4 100 lx
L = 50 lx
0
0 8 16 24 32
Collector to emitter voltage VCE (V)
10
1
10 –1
10 –2
10 –3
1
ICE(L) — L
VCE = 10V
Ta = 25˚C
T = 2856K
10 10 2
Illuminance L (lx)
10 3
2





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