Darlington Phototransistor. PNA2602 Datasheet

PNA2602 Phototransistor. Datasheet pdf. Equivalent

Part PNA2602
Description Darlington Phototransistor
Feature Darlington Phototransistors PNA2602 Darlington Phototransistor Unit : mm For optical control syste.
Manufacture Panasonic Semiconductor
Datasheet
Download PNA2602 Datasheet

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PNA2602
Darlington Phototransistors
PNA2602
Darlington Phototransistor
For optical control systems
Features
Darlington output, high sensitivity
Easy to combine light emission and photodetection on same
printed circuit board
Small size, thin side-view type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Ratings
20
5
30
100
–25 to +80
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
4.5±0.3
ø3.5±0.2
Unit : mm
4.2±0.3
2.3 1.9
2-0.98±0.2
2-0.45±0.15
0.45±0.15
R1.75
2.54
1.2
12
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
ICEO
ICE(L)
λP
θ
VCE = 10V
VCE = 10V, L = 2 lx*1
VCE = 10V
Measured from the optical axis to the half power point
0.2
Response time
tr, tf*2 VCC = 10V, ICE(L) = 5mA, RL = 100
Collector saturation voltage VCE(sat) ICE(L) = 1mA, L = 100 lx*1
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
0.1
1
800
35
100
0.7
max
0.5
1.5
Unit
µA
mA
nm
deg.
µs
V
Sig.IN
50
VCC
(Input pulse)
Sig.OUT
RL
(Output pulse) td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1



PNA2602
PNA2602
Darlington Phototransistors
PC — Ta
120
100
80
60
40
20
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
32
Ta = 25˚C
T = 2856K
PC = 100mW
24
L = 30 lx
16
20 lx
10 lx
8
5 lx
0
0 4 8 12 16
Collector to emitter voltage
2 lx
1 lx
20 24
VCE (V)
10 3
10 2
10
1
10 –1
1
ICE(L) — L
VCE = 10V
Ta = 25˚C
T = 2856K
10 10 2
Illuminance L (lx)
10 3
ICE(L) — Ta
10
VCE = 10V
T = 2856K
1
ICEO — Ta
10 2
VCE = 10V
10
1
Spectral sensitivity characteristics
100
Ta = 25˚C
80
60
10 –1
10 –1
10 –2
40
20
10 –2
– 40
0
40 80 120
Ambient temperature Ta (˚C )
10 –3
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
0
200 400 600 800 1000 1200
Wavelength λ (nm)
Directivity characteristics
0˚ 10˚ 20˚
100
90
80 30˚
70
60
40˚
50
40 50˚
30 60˚
20 70˚
80˚
90˚
tr — ICE(L)
Sig.IN
Sig.
OUT
50
VCC
Sig. 90%
OUT
RL tr
td
10%
tf
10 3 RL = 1k
500
10 2
100
10
10 –2
10 –1
VCC = 10V
Ta = 25˚C
1 10
Collector photo current ICE(L) (mA)
tf — ICE(L)
Sig.IN
Sig.
OUT
50
VCC
Sig. 90%
OUT
RL tr
td
10%
tf
10 3
RL = 1k
500
100
10 2
10
10 –2
10 –1
VCC = 10V
Ta = 25˚C
1 10
Collector photo current ICE(L) (mA)
2





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