Integrated Circuit. PNA4211F Datasheet

PNA4211F Circuit. Datasheet pdf. Equivalent


Part PNA4211F
Description Bipolar Integrated Circuit
Feature Photo IC PNA4211F Bipolar Integrated Circuit with Photodetection Function Unit : mm 5.3 max. 2-1.6±.
Manufacture Panasonic Semiconductor
Datasheet
Download PNA4211F Datasheet

Photo IC PNA4211F Bipolar Integrated Circuit with Photodete PNA4211F Datasheet
Recommendation Recommendation Datasheet PNA4211F Datasheet




PNA4211F
Photo IC
PNA4211F
Bipolar Integrated Circuit with Photodetection Function
Features
Built-in amplifier circuit
Supports CD and 4-speed CD-ROM
5.3 max.
2-1.6±0.1
2-0.8±0.1
10 9 8 7 6
Unit : mm
1.8±0.3
1.0±0.2
0.6±0.2
Block Diagram
1.0
1 234 5
10-0.4+–00..115
10-0.35±0.1
5.0±0.1
10˚ 10˚
0.2
+0.1
–0.05
x
5˚ 5˚ x : 0.0±0.2
y : 0.6±0.2
θ : 45±
++
1
10
DF
+
2
A
9
38
4 +B
7
CE
––
56
++
Dimensions of detection area
Unit : µm
E
C
D
B
A
F
x
x
Pin Description
Pin No.
1
2
3
4
5
Function
D Out
A Out
COMMON GND
B Out
C Out
Pin No.
6
7
8
9
10
Function
E Out
COMMON GND
VC
VCC
F Out
1



PNA4211F
Photo IC
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Power supply voltage
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCC
PD
Topr
Tstg
Ratings
+6
115
–20 to +70
–30 to +95
Unit
V
mW
˚C
˚C
PNA4211F
Electro-Optical Characteristics (VCC = 2.5V, Vref = 0V, VEE = – 2.5V, RL = 10k, Ta = 25˚C ± 3˚C )
Parameter
Symbol
Conditions
min typ max Unit
Current of all circuits
Output voltage
ICC
VO
Pl = 10µW, λ = 780nm, A to D
Pl = 10µW, λ = 780nm, E, F
2.2 4.0 mA
300
mV
660
Output offset voltage
VO(offset)
–20 0 +20 mV
(A+C)–(B+D)
Output offset voltage difference VO(offset) E – F
–20 0 +20
mV
–20 0 +20
Frequency characteristics
fc λ = 780nm, –3dB, A to D
8 MHz
Note 1) The reference voltage for the output voltage and output offset voltage is Vref (8-pin voltage).
Note 2) The output voltage does not include the output offset voltage.
2





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