NPN Phototransistor. PNZ109CL Datasheet

PNZ109CL Phototransistor. Datasheet pdf. Equivalent


Part PNZ109CL
Description Silicon NPN Phototransistor
Feature Phototransistors PNZ109CL Silicon NPN Phototransistor Unit : mm For optical control systems Featur.
Manufacture Panasonic Semiconductor
Datasheet
Download PNZ109CL Datasheet

Phototransistors PNZ109CL Silicon NPN Phototransistor Unit PNZ109CL Datasheet
Recommendation Recommendation Datasheet PNZ109CL Datasheet




PNZ109CL
Phototransistors
PNZ109CL
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity : ICE(L) = 2 mA (min.) (at L = 500 lx)
Wide directional sensitivity for easy use
Fast response : tr = 5 µs (typ.)
Signal mixing capability using base pin
Small size (low in height) package
Resin to cutoff visible light is used
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VCBO
VECO
VEBO
IC
PC
Topr
Tstg
Ratings
20
30
3
5
20
100
–25 to +85
–30 to +100
Unit
V
V
V
V
mA
mW
˚C
˚C
Unit : mm
3-ø0.45±0.05
2.54±0.25
3
1
2
1: Emitter
2: Base
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Collector photo current
Peak sensitivity wave length
Acceptance half angle
ICEO
ICE(L)
λP
θ
VCE = 10V
VCE = 10V, L = 500 lx*1
VCE = 10V
Measured from the optical axis to the half power point
2.5
Rise time
Fall time
Collector saturation voltage
tr*2
tf*2
VCE(sat)
VCC = 10V, ICE(L) = 5mA
RL = 100
ICE(L) = 1mA, L = 1000 lx*1
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
0.05
4
900
80
5
6
0.3
max
2
0.6
Unit
µA
mA
nm
deg.
µs
µs
V
Sig.IN
50
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1



PNZ109CL
Phototransistors
PNZ109CL
PC — Ta
120
100
80
60
40
20
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
20
Ta = 25˚C
T = 2856K
16
500 lx
300 lx
200 lx
12
100 lx
8
50 lx
4
L = 10 lx
0
0 4 8 12 16 20 24
Collector to emitter voltage VCE (V)
10 3
10 2
10
1
10 –1
10 –2
1
ICE(L) — L
VCE = 10V
Ta = 25˚C
T = 2856K
10 10 2 10 3
Illuminance L (lx)
10 4
ICEO — Ta
10 2
VCE = 10V
10
ICE(L) — Ta
10 VCE = 10V
L = 100 lx
T = 2856K
Spectral sensitivity characteristics
100 VCE = 10V
Ta = 25˚C
80
1
10 –1
60
1
40
10 –2
20
10 –3
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
10 –1
– 40
0
40 80 120
Ambient temperature Ta (˚C )
0
600 700 800 900 1000 1100 1200
Wavelength λ (nm)
Directivity characteristics
0˚ 10˚ 20˚ 30˚
40˚
100
80 50˚
60 60˚
40 70˚
20 80˚
90˚
10 4
10 3
10 2
10
1
tr — ICE(L)
VCC = 10V
Ta = 25˚C
RL = 1k
500
100
10 4
10 3
10 2
10
1
tf — ICE(L)
VCC = 10V
Ta = 25˚C
RL = 1k
500
100
10 –1
10 –2
10 –1
1
10 10 2
Collector photo current ICE(L) (mA)
10 –1
10 –2
10 –1
1
10 10 2
Collector photo current ICE(L) (mA)
2





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