PNZ109F

Phototransistors PNZ109F Silicon NPN Phototransistor Unit : mm For optical control systems Features Flat window design which is suited to optical systems Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : λp = 900 nm (typ.) Fast response : tr = 8 µs (typ.) Long lifetime, high reliability 4.5±0.2 ø4.6±0.15 Glass window 12.7 min. 3-ø0.45±0.05 2.54±0.25 0 1. .2 ±0 0± 0. 15 45± 3˚ 1. Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VCBO VECO VEBO IC PC Topr Tstg Ratings 20 30 3 5 30 150 –25 to +85 –30 to +100 Unit V V V V mA mW ˚C ˚C 3 2 1 1: Emitter 2: Base 3: Collector ø5.75 max. Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wave length Acceptance half angle Rise time Fall time Collector saturation voltage *1 *2 Symbol ICEO ICE(L) λP θ tr*2 tf*2 VCE(sat) VCE = 10V Conditions VCE = 10V, L = 100 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA RL = 100Ω ICE(L) = 1mA, L = 1000 lx*1 lx*1 min 0.3 typ 0.05 900 40 8 9 0.3 max 2 Unit µA mA nm deg. µs µs 0.6 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switchi...