PNZ109L

Phototransistors PNZ109L Silicon NPN Phototransistor ø4.6±0.15 Unit : mm Glass lens For optical control systems Features High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 100 lx) 12.7 min. 6.3±0.3 Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : λp = 900 nm (typ.) Fast response : tr = 5 µs (typ.) Long lifetime, high reliability 3-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VCBO VECO VEBO IC PC Topr Tstg Ratings 20 30 3 5 30 150 –25 to +85 –30 to +100 Unit V V V V mA mW ˚C ˚C 3 2 1 1: Emitter 2: Base 2: Collector ø5.75 max. Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage *1 *2 Symbol ICEO ICE(L) λP θ tr*2 tf *2 Conditions VCE = 10V VCE = 10V, L = 100 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA RL = 100Ω ICE(L) = 1mA, L = 500 lx*1 lx*1 min 3.5 typ 0.05 900 10 5 6 0.3 max 2 Unit µA mA nm deg. µs µs VCE(sat) 0.6 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switc...