NPN Phototransistor. PNZ109L Datasheet

PNZ109L Phototransistor. Datasheet pdf. Equivalent

Part PNZ109L
Description Silicon NPN Phototransistor
Feature Phototransistors PNZ109L Silicon NPN Phototransistor ø4.6±0.15 Unit : mm Glass lens For optical c.
Manufacture Panasonic Semiconductor
Datasheet
Download PNZ109L Datasheet

Phototransistors PNZ109L Silicon NPN Phototransistor ø4.6±0 PNZ109L Datasheet
Recommendation Recommendation Datasheet PNZ109L Datasheet




PNZ109L
Phototransistors
PNZ109L
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 100 lx)
Built-in filter to cutoff visible light for reducing ambient light noise
Peak sensitivity wavelength matched with infrared light emitting
devices : λp = 900 nm (typ.)
Fast response : tr = 5 µs (typ.)
Long lifetime, high reliability
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VCBO
VECO
VEBO
IC
PC
Topr
Tstg
Ratings
20
30
3
5
30
150
–25 to +85
–30 to +100
Unit
V
V
V
V
mA
mW
˚C
˚C
ø4.6±0.15
Unit : mm
Glass lens
3-ø0.45±0.05
2.54±0.25
3
21
ø5.75 max.
1: Emitter
2: Base
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
ICEO
ICE(L)
λP
θ
VCE = 10V
VCE = 10V, L = 100 lx*1
VCE = 10V
Measured from the optical axis to the half power point
3.5
Rise time
Fall time
Collector saturation voltage
tr*2
tf*2
VCE(sat)
VCC = 10V, ICE(L) = 5mA
RL = 100
ICE(L) = 1mA, L = 500 lx*1
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
0.05
900
10
5
6
0.3
max
2
0.6
Unit
µA
mA
nm
deg.
µs
µs
V
Sig.IN
50
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1



PNZ109L
Phototransistors
PNZ109L
PC — Ta
200
160
120
80
40
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
20
Ta = 25˚C
500 lx T = 2856K
1000 lx
300 lx
16 200 lx
12
100 lx
8
50 lx
4
L = 10 lx
0
0 4 8 12 16 20 24
Collector to emitter voltage VCE (V)
10 3
10 2
10
1
10 –1
10 –2
1
ICE(L) — L
VCE = 10V
Ta = 25˚C
T = 2856K
10 10 2 10 3
Illuminance L (lx)
10 4
ICEO — Ta
10 2
VCE = 10V
10
ICE(L) — Ta
10 2 VCE = 10V
L = 100 lx
T = 2856K
Spectral sensitivity characteristics
100 VCE = 10V
Ta = 25˚C
80
1 60
10
10 –1
40
10 –2
20
10 –3
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
1
– 40 0
40 80 120
Ambient temperature Ta (˚C )
0
600 700 800 900 1000 1100 1200
Wavelength λ (nm)
Directivity characteristics
0˚ 10˚ 20˚
100
90
80 30˚
70
60
40˚
50
40 50˚
30 60˚
70˚
80˚
90˚
tr — ICE(L)
10 4
VCC = 10V
Ta = 25˚C
10 3
10 2
RL = 1k
10 500
100
1
10 –1
10 –2
10 –1
1
10 10 2
Collector photo current ICE(L) (mA)
tf — ICE(L)
10 4
VCC = 10V
Ta = 25˚C
10 3
10 2
RL = 1k
10 500
100
1
10 –1
10 –2
10 –1
1
10 10 2
Collector photo current ICE(L) (mA)
2





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