PNZ121S

Phototransistors PNZ121S Silicon NPN Phototransistor Unit : mm For optical control systems Features Stable operations in high illuminance region Low dark current 12.5 min. 4.1±0.3 2.0±0.2 ø3.0±0.2 Fast response : tr = 1 µs (typ.) Small size (ø 3) ceramic package ø0.3±0.05 ø0.45±0.05 0.9±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 10 50 –25 to +85 –30 to +100 Unit V V mA mW ˚C ˚C 2 1 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time *1 Symbol ICEO ICE(L) λP θ tr*2 tf*2 *3 Conditions VCE = 10V VCE = 10V, L = 1000 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100Ω lx*1 min 120 typ 1 800 30 1 1.3 max 100 280 Unit nA µA nm deg. µs µs Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,, ,, ,, *3 I CE(...