NPN Phototransistor. PNZ123S Datasheet

PNZ123S Phototransistor. Datasheet pdf. Equivalent

Part PNZ123S
Description Silicon NPN Phototransistor
Feature Phototransistors PNZ123S Silicon NPN Phototransistor Unit : mm For optical control systems 4.1±0.3.
Manufacture Panasonic Semiconductor
Datasheet
Download PNZ123S Datasheet

Phototransistors PNZ123S Silicon NPN Phototransistor Unit : PNZ123S Datasheet
Recommendation Recommendation Datasheet PNZ123S Datasheet




PNZ123S
Phototransistors
PNZ123S
Silicon NPN Phototransistor
For optical control systems
Can be combined with LN62S to form an photo interrupter
Features
High sensitivity
Low dark current
Fast response : tr = 3.5 µs (typ.)
Small size (ø 3) ceramic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Ratings
20
5
10
50
–25 to +85
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
ø3.0±0.2
Unit : mm
ø0.3±0.05
ø0.45±0.05
0.9±0.15
21
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
ICEO VCE = 10V
1
ICE(L) VCE = 10V, L = 1000 lx*1
400
λP VCE = 10V
800
θ Measured from the optical axis to the half power point
30
100 nA
700 µA
nm
deg.
Rise time
Fall time
tr*2
tf*2
VCC = 10V, ICE(L) = 1mA, RL = 100
3.5
5
µs
µs
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
Sig.IN
50
VCC
(Input pulse)
Sig.OUT
RL
(Output pulse) td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1



PNZ123S
Phototransistors
PNZ123S
PC — Ta
60
50
40
30
20
10
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
1600
Ta = 25˚C
T = 2856K
1200
L =2000 lx
1750 lx
1500 lx
800
1250 lx
1000 lx
400 750 lx
500 lx
250 lx
0
0 4 8 12 16 20 24
Collector to emitter voltage VCE (V)
ICE(L) — L
10 4
VCE = 10V
Ta = 25˚C
T = 2856K
10 3
10 2
10
1
10 10 2 10 3 10 4
Illuminance L (lx)
ICEO — Ta
10 3
VCE = 10V
10 2
10
1
ICE(L) — Ta
Spectral sensitivity characteristics
10 4
VCE = 10V
100 VCE = 10V
T = 2856K
Ta = 25˚C
80
L = 1500 lx
60
10 3
1000 lx
40
20
10 –1
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
10 2
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
0
200 400 600 800 1000 1200
Wavelength λ (nm)
Directivity characteristics
0˚ 10˚ 20˚
100
90
80 30˚
70
60
40˚
50
40 50˚
30 60˚
20 70˚
80˚
90˚
tr — ICE(L)
10 3 VCC = 10V
Ta = 25˚C
10 2
10
RL = 1k
500
1 100
10 –1
10 –2
10 –1
1
10
Collector photo current ICE(L) (mA)
tf — ICE(L)
10 3 VCC = 10V
Ta = 25˚C
10 2
10 RL = 1k
500
100
1
10 –1
10 –2
10 –1
1
10
Collector photo current ICE(L) (mA)
2





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