NPN Phototransistor. PNZ126S Datasheet

PNZ126S Phototransistor. Datasheet pdf. Equivalent


Part PNZ126S
Description Silicon NPN Phototransistor
Feature Phototransistors PNZ126S Silicon NPN Phototransistor Unit : mm For optical control systems Feature.
Manufacture Panasonic Semiconductor
Datasheet
Download PNZ126S Datasheet


Phototransistors PNZ126S Silicon NPN Phototransistor Unit : PNZ126S Datasheet
Recommendation Recommendation Datasheet PNZ126S Datasheet




PNZ126S
Phototransistors
PNZ126S
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Good collector photo current linearity with respect to optical
power input
Fast response : tr = 2.5 µs (typ.)
Small size (ø 3) ceramic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Ratings
20
5
20
50
–25 to +85
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
ø3.0±0.2
Unit : mm
Color indication ICE(L) rank
ø0.3±0.05
ø0.45±0.05
0.9±0.15
21
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
ICEO VCE = 10V
1 100 nA
Collector photo current
ICE(L)*3 VCE = 10V, L = 1000 lx*1
1050
2560 µA
Peak sensitivity wavelength λP VCE = 10V
800 nm
Acceptance half angle
θ Measured from the optical axis to the half power point
30
deg.
Rise time
Fall time
tr*2
tf*2
VCC = 10V, ICE(L) = 1mA, RL = 100
2.5
3.5
µs
µs
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
Sig.IN
50
VCC
(Input pulse)
Sig.OUT
RL
(Output pulse) td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
*3 ICE(L) Classifications
Class Q R S T U
ICE(L) (µA) 1050 to1350 1260 to 1580 1480 to 1860 1730 to 2180 2030 to 2560
Color indication
Brown
Yellow
Pink
Black
Red
1



PNZ126S
Phototransistors
PNZ126S
PC — Ta
60
50
40
30
20
10
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
4
Ta = 25˚C
T = 2856K
3 L =2000 lx
1800 lx
1600 lx
2 1400 lx
1200 lx
1000 lx
800 lx
1 600 lx
400 lx
200 lx
100 lx
0
0 10 20 30
Collector to emitter voltage VCE (V)
ICE(L) — L
10 4
VCE = 10V
Ta = 25˚C
T = 2856K
10 3
10 2
10
1
10 10 2 10 3 10 4
Illuminance L (lx)
ICE(L) — Ta
10 4
VCE = 10V
T = 2856K
L = 1500 lx
1000 lx
10 3 500 lx
10 2
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICEO — Ta
10 4
VCE = 10V
10 3
10 2
10
1
10 –1
10 –2
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
Spectral sensitivity characteristics
100
Ta = 25˚C
80
60
40
20
0
200 400 600 800 1000 1200
Wavelength λ (nm)
Directivity characteristics
0˚ 10˚ 20˚
100
90
80 30˚
70
60
40˚
50
40 50˚
30 60˚
20 70˚
80˚
90˚
tr — ICE(L)
10 3 VCC = 10V
Ta = 25˚C
10 2
10
RL = 1k
500
1 100
10 –1
10 –1
1
10 10 2
Collector photo current ICE(L) (mA)
tf — ICE(L)
10 3 VCC = 10V
Ta = 25˚C
10 2
10
RL = 1k
500
100
1
10 –1
10 –1
1
10 10 2
Collector photo current ICE(L) (mA)
2







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