NPN Phototransistor. PNZ1270 Datasheet

PNZ1270 Phototransistor. Datasheet pdf. Equivalent

Part PNZ1270
Description Silicon NPN Phototransistor
Feature Phototransistors PNZ1270 Silicon NPN Phototransistor Unit : mm For optical control systems 0.5±0.1.
Manufacture Panasonic Semiconductor
Datasheet
Download PNZ1270 Datasheet

Phototransistors PNZ1270 Silicon NPN Phototransistor Unit : PNZ1270 Datasheet
Recommendation Recommendation Datasheet PNZ1270 Datasheet




PNZ1270
Phototransistors
PNZ1270
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Good collector photo current linearity with respect to optical
power input
Fast response : tr = 2.5 µs (typ.)
Small size designed for easier mounting to printed circuit board
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Ratings
20
5
20
50
–25 to +85
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
Unit : mm
Type number : Emitter mark (Blue)
10.0 min.
10.0 min.
3.2±0.3 3.2±0.3
ø1.8
1
2
1.8 2.8±0.2 1.8
R0.9
1: Collector
2: Emitter
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
ICEO VCE = 10V
1 100 nA
Collector photo current
ICE(L)*3 VCE = 10V, L = 1000 lx*1
0.8 19.2 mA
Peak sensitivity wavelength λP VCE = 10V
800 nm
Acceptance half angle
θ Measured from the optical axis to the half power point
14
deg.
Rise time
Fall time
tr*2
tf*2
VCC = 10V, ICE(L) = 1mA, RL = 100
2.5
3.5
µs
µs
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
Sig.IN
50
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
*3 ICE(L) Classifications
Class
Q
ICE(L) (mA)
0.8 to 2.4
R
1.6 to 4.8
S
3.2 to 9.6
T
6.4 to 19.2
1



PNZ1270
Phototransistors
PNZ1270
PC — Ta
60
50
40
30
20
10
0
– 20 0
20 40 60 80 100
Ambient temperature Ta (˚C )
ICE(L) — VCE
5
Ta = 25˚C
T = 2856K
4 L =1000 lx
3
2 500 lx
1 250 lx
100 lx
0
0 4 8 12 16 20 24
Collector to emitter voltage VCE (V)
ICE(L) — L
10 5
VCE = 10V
Ta = 25˚C
T = 2856K
10 4
10 3
10 2
10
10
10 2 10 3 10 4
Illuminance L (lx)
ICEO — Ta
10 3
VCE = 10V
10 2
10
1
ICE(L) — Ta
10 5
VCE = 10V
T = 2856K
10 4
10 3
Spectral sensitivity characteristics
100 VCE = 10V
Ta = 25˚C
80
60
40
20
10 –1
– 40
0
40 80 120
Ambient temperature Ta (˚C )
10 2
– 40
0
40 80 120
Ambient temperature Ta (˚C )
0
200 400 600 800 1000 1200
Wavelength λ (nm)
Directivity characteristics
0˚ 10˚ 20˚
100
90
80 30˚
70
60
40˚
50
40 50˚
30 60˚
20 70˚
80˚
90˚
tr — ICE(L)
10 2 VCE = 10V
Ta = 25˚C
10
RL = 1k
500
1 100
10 –1
10 –2
10 –2
10 –1
1
10
Collector photo current ICE(L) (mA)
tf — ICE(L)
10 2 VCE = 10V
Ta = 25˚C
10
RL = 1k
500
1 100
10 –1
10 –2
10 –2
10 –1
1
10
Collector photo current ICE(L) (mA)
2





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