Phototransistors
PNZ1270
Silicon NPN Phototransistor
Unit : mm
For optical control systems
0.5±0.1
Features
High sens...
Photo
transistors
PNZ1270
Silicon
NPN Photo
transistor
Unit : mm
For optical control systems
0.5±0.1
Features
High sensitivity Good collector photo current linearity with respect to optical power input Small size designed for easier mounting to printed circuit board
2.8±0.2 1.05±0.1
Type number : Emitter mark (Blue) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 2
1
45 ˚
2.2±0.15 (0.7) 0.15 (0.7)
1.8
2.8±0.2 1.8
Fast response : tr = 2.5 µs (typ.)
R0.9
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 20 50 –25 to +85 –30 to +100 Unit V V mA mW ˚C ˚C
0.85 ± 0.15
1: Collector 2: Emitter
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time
*1 *2
Symbol ICEO ICE(L)*3 λP θ tr*2 tf*2 VCE = 10V
Conditions VCE = 10V, L = 1000 lx*1 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100Ω
min 0.8
typ 1 800 14 2.5 3.5
max 100 19.2
Unit nA mA nm deg. µs µs
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to incre...