PNZ313

PIN Photodiodes PNZ313B PIN Photodiode Unit : mm For optical control systems 8.0±0.5 5.0 7.0±0.5 Anode mark ø1.6 Device center Features Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) High sensitivity, high reliability Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) Wide detection area, wide acceptance half angle : θ = 65 deg. (typ.) Adoption of visible light cutoff resin 13 min. 2.3±0.3 2-1.2±0.15 2-0.6±0.15 0.41±0.15 2 1 5.08±0.25 Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Ratings 30 100 –30 to +85 – 40 to +100 Unit V mW ˚C ˚C 2.8±0.3 1: Cathode 2: Anode Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Photo current Peak sensitivity wavelength Response time Response time Capacitance between pins Acceptance half angle *1 *2 Symbol ID IL λP tr, tf *2 Conditions VR = 10V VR = 10V, L = 1000 VR = 10V VR = 10V, RL = 1kΩ VR = 10V, RL = 100kΩ VR = 0V, f = 1MHz Measured from the optical axis to the half power point lx*1 min 15 typ 5 25 960 50 5 70 65 max 50 Unit nA µA nm ns µs pF deg. tr, tf*2 Ct θ Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VR = 10V (Input pulse) Sig.OUT (Output pulse) RL td tr tf 90% 10% td : Delay time tr : Rise time (Time requir...