PIN Photodiode. PNZ313B Datasheet

PNZ313B Photodiode. Datasheet pdf. Equivalent

Part PNZ313B
Description PIN Photodiode
Feature PIN Photodiodes PNZ313B PIN Photodiode Unit : mm For optical control systems 8.0±0.5 5.0 7.0±0.5 .
Manufacture Panasonic Semiconductor
Datasheet
Download PNZ313B Datasheet

PIN Photodiodes PNZ313B PIN Photodiode Unit : mm For optic PNZ313B Datasheet
Recommendation Recommendation Datasheet PNZ313B Datasheet




PNZ313B
PIN Photodiodes
PNZ313B
PIN Photodiode
For optical control systems
Features
Fast response which is well suited to high speed modulated light
detection : tr, tf = 50 ns (typ.)
High sensitivity, high reliability
Peak sensitivity wavelength matched with infrared light emitting
diodes : λP = 960 nm (typ.)
Wide detection area, wide acceptance half angle : θ = 65 deg. (typ.)
Adoption of visible light cutoff resin
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings
Reverse voltage (DC)
Power dissipation
Operating ambient temperature
Storage temperature
VR 30
PD 100
Topr –30 to +85
Tstg – 40 to +100
Unit
V
mW
˚C
˚C
7.0±0.5
Unit : mm
Anode mark ø1.6
Device
center
2-1.2±0.15
2-0.6±0.15
0.41±0.15
21
5.08±0.25
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
Dark current
Photo current
Peak sensitivity wavelength
Response time
Response time
Capacitance between pins
Acceptance half angle
ID
IL
λP
tr, tf*2
tr, tf*2
Ct
θ
VR = 10V
VR = 10V, L = 1000 lx*1
VR = 10V
VR = 10V, RL = 1k
VR = 10V, RL = 100k
VR = 0V, f = 1MHz
Measured from the optical axis to the half power point
15
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
typ
5
25
960
50
5
70
65
max
50
Unit
nA
µA
nm
ns
µs
pF
deg.
λP = 800nm
Sig.IN
50
VR = 10V
(Input pulse)
Sig.OUT
(Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current
to increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current
to decrease from 90% to 10% of its initial value)
1



PNZ313B
PIN Photodiodes
PNZ313B
PD — Ta
120
100
80
60
40
20
0
– 30 0
20 40 60 80 100
Ambient temperature Ta (˚C )
IL — L
10 3
VR = 10V
Ta = 25˚C
T = 2856K
10 2
10
1
10 –1
10
10 2 10 3
Illuminance L (lx)
10 4
ID — Ta
10 3
VR = 10V
10 2
10
1
10 –1
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
IL — Ta
160 VR = 10V
L = 1000 lx
140 T = 2856K
120
100
80
60
40
20
0
– 40 – 20 0 20 40 60 80 100
Ambient temperature Ta (˚C )
Spectral sensitivity characteristics
100 VR = 10V
Ta = 25˚C
80
Directional characteristics
100
Ta = 25˚C
80
60 60
40 40
20 20
0
600 700 800 900 1000 1100 1200
Wavelength λ (nm)
0
80
40 0 40
Angle θ (deg.)
80
Ct — VR
100
80
60
40
20
tr , tf — RL
10 2
Sig.IN VR = 10V
10 50
Sig. 90%
OUT
RL tr
td
10%
tf
1
10 –1
ID — VR
10 2
10
1
0
10 –2
10 –1
1
10 10 2
Reverse voltage VR (V)
10 –2
10 –1
1
10 10 2
External load resistance RL (k)
10 –1
0
8 16 24 32 40
Reverse voltage VR (V)
48
2





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