power transistor. PPC5001T Datasheet

PPC5001T transistor. Datasheet pdf. Equivalent

Part PPC5001T
Description NPN microwave power transistor
Feature DISCRETE SEMICONDUCTORS DATA SHEET PPC5001T NPN microwave power transistor Product specification Su.
Manufacture Philips
Datasheet
Download PPC5001T Datasheet

DISCRETE SEMICONDUCTORS DATA SHEET PPC5001T NPN microwave PPC5001T Datasheet
Recommendation Recommendation Datasheet PPC5001T Datasheet




PPC5001T
DISCRETE SEMICONDUCTORS
DATA SHEET
PPC5001T
NPN microwave power transistor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
1997 Mar 03



PPC5001T
Philips Semiconductors
NPN microwave power transistor
Product specification
PPC5001T
FEATURES
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Interdigitated structure provides high emitter efficiency
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry gives good balance of dissipated
power and low thermal resistance
APPLICATIONS
Intended for use in common-collector oscillator circuits in
military and professional applications up to 5 GHz.
PINNING - SOT447A
PIN
1 base
2 emitter
3 collector
handbook, halfpage
3
1
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT447A metal ceramic flange package.
2
Side view
Marking code: 395
DESCRIPTION
c
b
e
MAM331
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in an oscillator circuit up to 5 GHz; typical values.
MODE OF OPERATION
f
(GHz)
VCE
(V)
IC
(mA)
Class A (CW)
5 20 200
PL
(mW)
450
1997 Mar 03
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)