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PRLL5818 Dataheets PDF



Part Number PRLL5818
Manufacturers Philips
Logo Philips
Description Schottky barrier diodes
Datasheet PRLL5818 DatasheetPRLL5818 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D121 PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes Product specification Supersedes data of 1996 May 03 1999 Apr 22 Philips Semiconductors Product specification Schottky barrier diodes FEATURES • Low switching losses • Fast recovery time • Guard ring protected • Hermetically sealed glass SMD package. APPLICATIONS • Low power, switched-mode power supplies • Rectifying • Polarity protection. DESCRIPTION The PRLL5817 to PRLL5819 types are Schot.

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DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D121 PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes Product specification Supersedes data of 1996 May 03 1999 Apr 22 Philips Semiconductors Product specification Schottky barrier diodes FEATURES • Low switching losses • Fast recovery time • Guard ring protected • Hermetically sealed glass SMD package. APPLICATIONS • Low power, switched-mode power supplies • Rectifying • Polarity protection. DESCRIPTION The PRLL5817 to PRLL5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD87 hermetically sealed glass SMD packages incorporating ImplotecTM(1) technology. (1) Implotec is a trademark of Philips. PRLL5817; PRLL5818; PRLL5819 handbook, halfpage k a MAM190 Fig.1 Simplified outline (SOD87) and symbol. MARKING TYPE NUMBER PRLL5817 PRLL5818 PRLL5819 9 9 9 MARKING CODE 1999 Apr 22 2 Philips Semiconductors Product specification Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR PRLL5817 PRLL5818 PRLL5819 VRSM non-repetitive peak reverse voltage PRLL5817 PRLL5818 PRLL5819 VRRM repetitive peak reverse voltage PRLL5817 PRLL5818 PRLL5819 VRWM crest working reverse voltage PRLL5817 PRLL5818 PRLL5819 IF(AV) IFSM Tstg Tj average forward current non-repetitive peak forward current storage temperature junction temperature Tamb = 60 °C t = 10 ms half sine wave; Tj = Tj max prior to surge: VR = 0 − − − − − −65 − 20 30 40 1 25 +175 125 V V V A A °C °C − − − 20 30 40 V V V − − − 24 36 48 V V V PARAMETER continuous reverse voltage − − − 20 30 40 V V V CONDITIONS MIN. MAX. UNIT 1999 Apr 22 3 Philips Semiconductors Product specification Schottky barrier diodes ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage PRLL5817 see Fig.2 IF = 0.1 A IF = 1 A IF = 3 A VF forward voltage PRLL5818 see Fig.2 IF = 0.1 A IF = 1 A IF = 3 A VF forward voltage PRLL5819 see Fig.2 IF = 0.1 A IF = 1 A IF = 3 A IR Cd reverse current diode capacitance PRLL5817 PRLL5818 PRLL5819 Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD87 standard mounting conditions. PARAMETER thermal resistance from junction to ambient VR = VRRMmax; note 1 PRLL5817; PRLL5818; PRLL5819 CONDITIONS − − − − − − − − − − − − − − MIN. − − − − − − − − − TYP. MAX. 320 450 750 330 550 875 340 600 900 1 10 − − − UNIT mV mV mV mV mV mV mV mV mV mA mA pF pF pF 0.5 5 70 50 50 VR = VRRMmax; Tj = 100 °C VR = 4 V; f = 1 MHz CONDITIONS note 1 VALUE 150 UNIT K/W 1999 Apr 22 4 Philips Semiconductors Product specification Schottky barrier diodes GRAPHICAL DATA PRLL5817; PRLL5818; PRLL5819 handbook, halfpage 5 MBE634 IF (A) 4 Tj = 125 oC 25 oC 3 2 1 0 0 0.5 VF (V) 1 Fig.2 Typical forward voltage. 1 a=3 PF(AV) (W) 2.5 2 1.57 1.42 1 MBE642 0.5 0 0 0.5 1 1.5 IF(AV) (A) 2 Fig.3 PRLL817. Maximum values stea.


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