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PS21313

Mitsubishi Electric Semiconductor

Dual-In-Line Package Intelligent Power-Module

MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR


Mitsubishi Electric Semiconductor

PS21313

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Description
MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR Module> PS21313 PS21313 TRANSFER-MOLD TRANSFER-MOLD TYPE TYPE INSULATED INSULATED TYPE TYPE PS21313 INTEGRATED POWER FUNCTIONS 3rd generation IGBT inverter bridge for 3 phase DC-to-AC power conversion. INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS For upper-leg IGBTS : Drive circuit, High voltage isolated high-speed level shifting, Control circuit under-voltage (UV) protection. Note : Bootstrap supply scheme can be applied. For lower-leg IGBTS : Drive circuit, Control circuit under-voltage protection (UV), Short-circuit protection (SC). Fault signaling : Corresponding to a SC fault (Low-side IGBT) or a UV fault (Low-side IGBT). Input interface : 5V line CMOS/TTL compatible, Schmitt Trigger receiver circuit. APPLICATION AC200V three-phase inverter drive for small power motor control. Fig. 1 PACKAGE OUTLINES HEAT SINK SIDE (3.556) (1) TERMINAL (0.5) (3.556) (1.656) (0.5) TERMINAL CODE VUFS (UPG) VUFB VP1 (COM) UP VVFS (VPG) VVFB VP1 (COM) VP VWFS (WPG) VWFB VP1 (COM) WP (UNG) VNO(NC) UN VN WN FO CFO CIN VNC VN1 (WNG) (VNG) P U V W N (1) (1.778 × 26) (1.778) (6.25) (6.25) (6.25) (8) (8) A (0.5) DUMMY PIN (0.5) (30.5) (0.75) 29 30 Type name , Lot No. (φ (φ3 .3) (17.4) (17.4) 28 27 26 25 24 23 22 21 20 19 18 16 17 15 13 14 12 10 11 987 654 321 E 2D PT H 2) 35 34 33 32 31 (7.62 × 4) (41) (42...




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