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- Transistor. TLP421 Datasheet |
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![]() TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP421
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage Circuits
TLP421
Unit in mm
The TOSHIBA TLP421 consists of a silicone photo−transistor optically
coupled to a gallium arsenide infrared emitting diode in a four lead
plastic DIP (DIP4) with having high isolation voltage
(AC: 5kVRMS (min)).
· Collector-emitter voltage: 80V (min.)
· Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
· Isolation voltage: 5000Vrms (min.)
· UL recognized: UL1577
· BSI approved: BS EN60065: 1994
Approved no.8411
BS EN60950: 1992
Approved no.8412
· SEMKO approved: EN60065, EN60950, EN60335
Approved no.9910249/01
TOSHIBA
Weight: 0.26 g
11−5B2
Pin Configurations
(top view)
1
2
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
4
3
1 2002-09-25
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![]() · Option(D4)type
TÜV approved: DIN VDE0884
Approved no.R9950202
Maximum operating insulation voltage: 890VPK
Maximu permissible overvoltage: 8000VPK
(Note): When a VDE0884 approved type is needed,
please designate the “Option(D4)”
Making the VDE applocation: DIN VDE0884
· Construction mechanical rating
7.62mm Pich
Typical Type
10.16mm Pich
TLPxxxF Type
Creepage distance
7.0mm(min)
8.0mm(min)
Clearance
7.0mm(min)
8.0mm(min)
Insulation thickness
0.4mm(min)
0.4mm(min)
TLP421
Current Transfer Ratio
Type
TLP421
Classi-
fication
(*1)
(None)
Rank Y
Rank GR
Rank BL
Rank GB
Current Transfer Ratio (%)
(IC / IF)
IF = 5mA, VCE = 5V, Ta = 25°C
Min Max
50 600
50 150
100 300
200 600
100 600
Marking Of Classification
Blank, Y, Y+, G, G+, B, B+, GB
Y, Y+
G, G+
B, B+
G, G+, B, B+, GB
(*1): Ex. rank GB: TLP421 (GB)
(Note): Application type name for certification test, please use standard product type name, i. e.
TLP421 (GB): TLP421
2 2002-09-25
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![]() Maximum Ratings (Ta = 25°C)
Characteristic
Stmbol
Rating
Unit
Forward current
Forward current derating(Ta ≥ 39°C)
Pulse forward current
(Note 2)
Power dissipation
Power dissipation derating
Reverse voltage
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
Collector current
Power dissipation(single circuit)
Power dissipation derating
(Ta ≥ 25°C)(single circuit)
Junction temperature
Operating temperature range
Storage temperature range
Lead soldering temperature (10s)
Total package power dissipation
Total package power dissipation derating
(Ta ≥ 25°C)
Isolation voltage
(Note 3)
IF
∆IF / °C
IFP
PD
∆PD / °C
VR
Tj
VCEO
VECO
IC
PC
∆PC / °C
Tj
Topr
Tstg
Tsol
PT
∆PT / °C
BVS
60
-0.7
1
100
-1.0
5
125
80
7
50
150
-1.5
125
-55~100
-55~125
260
250
-2.5
5000
mA
mA / °C
A
mW
mW / °C
V
°C
V
V
mA
mW
mW / °C
°C
°C
°C
°C
mW
mW / °C
Vrms
(Note 2): 100µs pulse, 100Hz frequency
(Note 3): AC, 1 min., R.H.≤ 60%. Apply voltage to LED pin and detector pin together.
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
Min Typ. Max Unit
VCC
IF
IC
Topr
―5
― 16
―1
-25 ―
24 V
25 mA
10 mA
85 °C
TLP421
3 2002-09-25
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