Ultrafast Diodes. MUR860 Datasheet

MUR860 Diodes. Datasheet pdf. Equivalent


Fairchild Semiconductor MUR860
MUR840, MUR860, RURP840, RURP860
Data Sheet
January 2002
8A, 400V - 600V Ultrafast Diodes
The MUR840, MUR860, RURP840 and RURP860 are low
forward voltage drop ultrafast recovery rectifiers (trr < 60ns).
They use a glass-passivated ion-implanted, epitaxial
construction.
These devices are intended for use as output rectifiers and
flywheel diodes in a variety of high-frequency pulse-width
modulated switching regulators. Their low stored charge and
attendant fast reverse-recovery behavior minimize electrical
noise generation and in many circuits markedly reduce the
turn-on dissipation of the associated power switching
transistors.
Formerly developmental type TA09616.
Ordering Information
PART NUMBER
PACKAGE
BRAND
MUR840
TO-220AC
MUR840
RURP840
TO-220AC
RURP840
MUR860
TO-220AC
MUR860
RURP860
TO-220AC
RURP860
NOTE: When ordering, use the entire part number.
Symbol
K
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <60ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
CATHODE
(FLANGE)
JEDEC TO-220AC
ANODE
CATHODE
A
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR
Average Rectified
(TC = 155oC)
Forward
Current
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. IF(AV)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
Maximum Lead Temperature for Soldering
Leads at 0.063 in. (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
MUR840
RURP840
400
400
400
8
16
100
75
20
-65 to 175
300
260
MUR860
RURP860
600
600
600
8
16
100
75
20
-65 to 175
300
260
UNITS
V
V
V
A
A
A
W
mJ
oC
oC
oC
©2002 Fairchild Semiconductor Corporation
MUR840, MUR860, RURP840, RURP86 Rev. B


MUR860 Datasheet
Recommendation MUR860 Datasheet
Part MUR860
Description 8A / 400V - 600V Ultrafast Diodes
Feature MUR860; MUR840, MUR860, RURP840, RURP860 Data Sheet January 2002 8A, 400V - 600V Ultrafast Diodes The MUR84.
Manufacture Fairchild Semiconductor
Datasheet
Download MUR860 Datasheet




Fairchild Semiconductor MUR860
MUR840, MUR860, RURP840, RURP860
Electrical Specifications TC = 25oC, Unless Otherwise Specified
MUR840, RURP840
MUR860, RURP860
SYMBOL
TEST CONDITION
MIN
TYP MAX
MIN
TYP
MAX
UNITS
VF IF = 8A
IF = 8A, TC = 150oC
- - 1.3 - - 1.5 V
- - 1.0 - - 1.2 V
IR VR = 400V
- - 100 - - - µA
VR = 600V
VR = 400V, TC = 150oC
VR = 600V, TC = 150oC
- - - - - 100 µA
- - 500 - - - µA
- - - - - 500 µA
trr IF = 1A, dIF/dt = 200A/µs
- - 60 - - 60 ns
IF = 8A, dIF/dt = 200A/µs
- - 70 - - 70 ns
ta IF = 8A, dIF/dt = 200A/µs
- 32 -
- 32 - ns
tb IF = 8A, dIF/dt = 200A/µs
- 21 -
- 21 - ns
QRR
IF = 8A, dIF/dt = 200A/µs
- 195 -
- 195 -
nC
CJ
RθJC
VR = 10V, IF = 0A
- 25 -
- -2
- 25 - pF
- - 2 oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
40
10
500
100 175oC
100oC
10
1
0.5
0
100oC
175oC
25oC
0.5 1 1.5 2
VF, FORWARD VOLTAGE (V)
2.5
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
1
0.1 25oC
0.01
0
100 200
300 400
500
VR, REVERSE VOLTAGE (V)
600
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
MUR840, MUR860, RURP840, RURP86 Rev. B



Fairchild Semiconductor MUR860
MUR840, MUR860, RURP840, RURP860
Typical Performance Curves (Continued)
60
TC = 25oC, dIF/dt = 200A/µs
50
40
trr
30
20 ta
tb
10
0
0.5 1
4
IF, FORWARD CURRENT (A)
8
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT
100
TC = 100oC, dIF/dt = 200A/µs
80
60
trr
40
ta
20 tb
0
0.5 1
4
IF, FORWARD CURRENT (A)
8
FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
125
TC = 175oC, dIF/dt = 200A/µs
100
trr
75
50
ta
25 tb
0
0.5 1
4
IF, FORWARD CURRENT (A)
8
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT
8
DC
6
SQ. WAVE
4
2
0
140
145 150 155 160 165 170
TC, CASE TEMPERATURE (oC)
175
FIGURE 6. CURRENT DERATING CURVE
100
80
60
40
20
0
0 50 100 150 200
VR, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
MUR840, MUR860, RURP840, RURP86 Rev. B







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