BC107

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 03 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN general purpose transistors FEATURES Low current (max. 100 mA) Low voltage (max. 45 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-18; SOT18 metal package. PNP complement: BC177. 3 BC107; BC108; BC109 PINNING PIN 1 2 3 emitter base collector, connected to the case DESCRIPTION handbook, halfpage 1 3 2 MAM264 2 1 Fig.1 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BC107 BC108; BC109 VCEO collector-emitter voltage BC107 BC108; BC109 ICM Ptot hFE peak collector current total power dissipation DC current gain BC107 BC108 BC109 fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz Tamb ≤ 25 °C IC = 2 mA; VCE = 5 V 110 110 200 100 450 800 800 − MHz open base − − − − 45 20 200 300 V V mA mW open emitter − − 50 30 V V CONDITIONS MIN. MAX. UNIT 1997 Sep 03 2 Philips Semiconductors Product specification NPN general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC107 BC108; BC109 VCEO collector-emitter voltage BC107 BC108; BC109 VEBO emitter-base voltage BC107 BC108; BC109 IC ICM IBM Ptot Tstg Tj Tamb collector current (DC) peak collecto...